Thermal High-Performance Packaging
There is a trend towards increased power generation by semiconductor devices, due to factors including the move to Wide-Band Gap (WBG) materials such as gallium nitride (GaN) and silicon carbide (SiC). This creates more and more challenges when it comes to power dissipation and mechanical stresses in a package occurring at elevated temperatures.
In this respect, successfully determining which materials and processes are reliable for packaging is crucial to the mass commercialization of power and WBG semiconductors and will help improve the reliability of existing and future WBG-based packaging. In particular, die attach and molding appear to be performance and reliability-limiting factors, which do not yet allow semiconductor power devices to operate at their full potential. Addressing the aforementioned technological challenges, one of CITC’s primary focuses within the Thermal High-Performance Packaging Program is the development of novel thermo-mechanical design strategies and device packaging platforms composed of low-stress and high-reliability rugged interconnects and molds with high power dissipation capability.